JPH0136710B2 - - Google Patents
Info
- Publication number
- JPH0136710B2 JPH0136710B2 JP57201292A JP20129282A JPH0136710B2 JP H0136710 B2 JPH0136710 B2 JP H0136710B2 JP 57201292 A JP57201292 A JP 57201292A JP 20129282 A JP20129282 A JP 20129282A JP H0136710 B2 JPH0136710 B2 JP H0136710B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- layer
- oxide film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 52
- 150000004767 nitrides Chemical class 0.000 description 15
- 238000002955 isolation Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201292A JPS5989458A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201292A JPS5989458A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5989458A JPS5989458A (ja) | 1984-05-23 |
| JPH0136710B2 true JPH0136710B2 (en]) | 1989-08-02 |
Family
ID=16438557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201292A Granted JPS5989458A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5989458A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611053B2 (ja) * | 1984-12-20 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH0611055B2 (ja) * | 1985-11-13 | 1994-02-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US4933295A (en) * | 1987-05-08 | 1990-06-12 | Raytheon Company | Method of forming a bipolar transistor having closely spaced device regions |
| US5064773A (en) * | 1988-12-27 | 1991-11-12 | Raytheon Company | Method of forming bipolar transistor having closely spaced device regions |
-
1982
- 1982-11-15 JP JP57201292A patent/JPS5989458A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5989458A (ja) | 1984-05-23 |
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